Research Cell: An International Journal of Engineering Sciences

Baljinder Kaur ¹, Lakhbir Singh ¹

Affiliations
1 Department of YCoE, Punjabi University, Guru Kashi Campus, Talwandi Sabo (Bathinda), IN

Abstract

Ferroelectrics are characterized by spontaneous polarization, the direction of which can be reversed by an external electric field. These two states of spontaneous polarization are used as the logic states of a memory device that does not require power backup to maintain the stored information. The basic physics, properties and the role of ferroelectric materials as non-volatile memory devices is discussed.

Keywords

Ferroelectric, Polarization, Non-Volatile, Feram, Hysteresis Loop.

Full Text

   

Lakhbir Singh ¹, Baljinder Kaur ¹, Navneet Dabra ²

Affiliations
1 Department of YCoE, Punjabi University, Guru Kashi Campus, Talwandi Sabo, Punjab, IN
2 Mata Sahib Kaur Girls College (affiliated to Punjabi University Patiala), Talwandi Sabo, Punjab, IN

Abstract

The term memory in context of 'Computer' is usually taken as random access memory (RAM). Static RAM (SRAM) and Dynamic RAM (DRAM) are its two main forms and both are considered volatile, as their state is lost or reset when power is removed from the system. Non-volatile memory is the computer memory that can retain the stored information even when power is switched off. Flash memory is the best-known form of NVRAM memory today, which uses NAND and NOR logic gates but it has the drawback of high power requirement which places another drawback making it slow in operation as high power requires more time to attain its high level. The system with very low power consumption and faster in operation is given by Ferroelectric-RAM. 'Ferroelectric-Ceramic'-polymer composites which are considered as potential source of Non-Volatile memory are discussed in this paper.

Keywords

Polarization, Dielectrics, Ferroelectrics, Polymers, composites, Memory, Switching time, Volatile and nNon-Volatile Memory, Fe-RAM.

Full Text